International Business Machines Corporation, commonly referred to as IBM, has recently unveiled an innovative new way to create a cheaper alternative to DRAM, as the company has been developing techniques to make enterprise data centers more dense. Designed to be less expensive than DRAM and faster than flash, phase-change memory, or PCM, is one of the several new emerging technologies. Phase-change memory has the potential to provide consumers as well as enterprises with faster access to data with lower costs; but prior to this happening, there are challenges which must be dealt with first.


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On June 2 2016, Adam Shah released an article on Computer World about the new Intel Chip. The company is planning to increase the performance of the Intel chips by over 10 percent. These improvements in terms of performance could possibly go up to 20 percent. This kind of improvement fuels the rivalry fire between the two: Intel and AMD.


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Researchers at International Business Machines, commonly referred to as IBM, have recently announced a significant breakthrough in phase-change memory. Scientists and researchers have spent several years searching for a non-volatile memory standard which is faster than NAND flash that simultaneously provides superior power characteristics, better longevity, as well as higher densities.


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Ubiquiti Networks, the American technology company based in San Jose, California is throwing its hat into the ring for a complete whole home Wi-Fi system which includes two range extenders with the purchase of its AmpliFi product. The company is new to the consumer market but as been around since 2005 and is best known for the UniFi series of wireless networking products which focuses on long-range Wi-Fi access points.


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On April 16 2016, VR World released an article talking about AMD’s Firepro W9100 with 32 GB memory. They talk about how the first memory card as released by AMD themselves last year. This was the Firepro S9170 with a 32 GB GDDR5 memory. This was designed for servers using a very expensive 16 GB/ 2 GB memory chips. Not only were these memory chips very expensive, they were not widely available for the public to purchase alone.


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It was just last week that Coho Data engineering team unveiled their latest creation: FlashBlade. FlashBlade is a blade-based flash storage array that addresses a problem that users have openly discussed over the past few years which is that the performance density of the PCle flash demands a completely fresh set of architectures for storage systems. In 2013, the Coho Data engineering team decided to pass on building a similar platform for FlashBlade because the main focus was developing the initial version of Coho’s storage software.


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The company Seagate is becoming the king of speed in the world of drives which is growing very rapidly for either the actual drive performances or connectivity. This technology has focused a lot on increasing the speed. From the looks of it now Seagate is doing both for the industry, with harnessing a 16 lane PCIE and also a NVME, which can push 10 gigs of data per second into a drive.


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You saw that correctly, a modder that goes by the name of Dr. Moddnstine has created a 128GB floppy drive out of an SD card and an old floppy disk reader. This is a part of his newly modded 1995 IBM Aptiva. Dr. Moddnstine built a new computer gaming system from an original IBM Aptiva dated back from 1995.


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Virtual Reality and the ever increasing interest in life-like computer game graphics has led to the development of very advanced graphics for computers and mobile devices. With the development of these new technologies in mind, companies such as Intel, Nvidia and AMD are designing chips that work better with higher quality graphics. Improvements to chip design are being made, such as developing faster ways in which Graphic Processing Units can create and broadcast images.


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It was revealed recently during the 2016 IEEE International Solid State Circuits Conference in San Francisco, that Micron’s 3D NAND flash memory has surpassed Hard Disk Drive technology in areal density for the first time. According to Tom Coughlin of Coughlin Associates, Micron’s 3D NAND flash memory was able to achieve an areal density of 2,77Tbpsi. This is more than double the 1.19Tbpsi achieved by Samsung’s flash memory in 2015.


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